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Freescale Semiconductor Technical Data
Document Number: MRF19030 Rev. 12, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * CDMA Performance @ 1990 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz -- - 47 dBc in 30 kHz BW 1.25 MHz -- - 55 dBc in 12.5 kHz BW 2.25 MHz -- - 55 dBc in 1 MHz BW Output Power -- 4.5 Watts Avg. Power Gain -- 13.5 dB Efficiency -- 17% * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW Output Power Features * Internally Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19030LR3 MRF19030LSR3
1930- 1990 MHz, 30 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465E - 04, STYLE 1 NI - 400 MRF19030LR3
CASE 465F - 04, STYLE 1 NI - 400S MRF19030LSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 83.3 0.48 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 2.1 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum)
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF19030LR3 MRF19030LSR3 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 A) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 300 mA) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) 1. Part is internally matched both on input and output. Gps -- 13 -- dB Ciss Coss Crss -- -- -- 98.5 37 1.3 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.3 0.29 2 4 4.5 0.4 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit
--
36
--
%
IMD
--
- 31
--
dBc
IRL
--
- 13
--
dB
Gps
12
13
--
dB
33
36
--
%
IMD
--
- 31
- 28
dBc
IRL
--
- 13
-9
dB
MRF19030LR3 MRF19030LSR3 2 RF Device Data Freescale Semiconductor
VBIAS + C2
B1
B2
R3
B3
B4
B5
VSUPPLY + C8
R1
R2
C3
C4
R4
+ C6 C9
R5
C5
R6
R7
L2
L3
Z6 Z7 RF INPUT Z5 Z1 Z2 C1 L1 Z3 Z4 DUT C10 Z8 C7 L4 Z9 Z10
RF OUTPUT
B1 - B5 C1, C7 C2, C8 C3, C5 C4, C6 C9 C10 L1 - L4 R1 - R7 Z1 Z2
Short Ferrite Beads 10 pF Chip Capacitors 470 F, 35 V Electrolytic Capacitors 0.1 F Chip Capacitors 5.1 pF Chip Capacitors 22 F Tantalum Chip Capacitor 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 12.5 nH Inductors 12 Chip Resistors (0805) 0.080 x 0.595 Microstrip 0.080 x 0.600 Microstrip
Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Substrate
0.080 x 0.480 Microstrip 0.325 x 0.280 Microstrip 0.510 x 0.200 Microstrip 0.510 x 0.200 Microstrip 0.325 x 0.280 Microstrip 0.080 x 0.480 Microstrip 0.080 x 0.530 Microstrip 0.080 x 0.671 Microstrip 0.030 x 3.00 x 5.00 Glass Teflon(R), Arlon
Figure 1. MRF19030LR3(SR3) Test Circuit Schematic
MRF19030LR3 MRF19030LSR3 RF Device Data Freescale Semiconductor 3
C2 C3 R1 B1 B2 R2 R3 R4 L2 C1 C4 B3 R5 C9 L3 C6 C7 R6 B4 R7 B5 C5
C8
L1
L4
C10
MRF19030 Rev. 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF19030LR3(SR3) Test Circuit Component Layout
MRF19030LR3 MRF19030LSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 50 IRL 40 30 VDD = 26 Vdc IDQ = 300 mA, Pout = 30 W (PEP) Two-Tone Measurement, 100 kHz Tone Spacing Gps 10 IMD 0 1900 1920 1940 1960 1980 f, FREQUENCY (MHz) 2000 -35 2020 -30 -20 -15 -10 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 45 VDD = 26 Vdc IDQ = 350 mA, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) -20 -30 -40 -50 -60 -70 Gps CDMA 9 Channels Forward PILOT:0, PAGING:1, TRAFFIC:8-13, SYNC:32 0 2 6 8 10 4 Pout, OUTPUT POWER (WATTS Avg.) CDMA -80 -90 -100 12 ADJACENT CHANNEL POWER RATION (dB) IMD, INTERMODULATION DISTORTION (dBc)
40 35
30 2.25 MHz 25 885 kHz 20 1.25 MHz
20
-25
15
10 5
Figure 3. Class AB Broadband Circuit Performance
Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power
-25 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 350 mA -50 300 mA -55 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 200 mA 300 mA 400 mA
-20 -30 -40 -50 5th Order -60 -70 -80 1.0 7th Order VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 3rd Order
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion versus Output Power
Figure 6. Intermodulation Distortion Products versus Output Power
15
14 f = 1960 MHz IDQ = 300 mA, Pout = 30 W (PEP) Two-Tone Measurement, 100 kHz Tone Spacing Gps 13
-22 -24 -26 -28 -30 IMD -32
G ps , POWER GAIN (dB)
14
350 mA 300 mA 13 300 mA 12 200 mA VDD = 26 Vdc, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 11 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100
G ps , POWER GAIN (dB)
400 mA
13.5
12.5
-34 -36
12 20
22
24
26
28
30
32
-38 34
VDD, DRAIN VOLTAGE (VOLTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage
MRF19030LR3 MRF19030LSR3 RF Device Data Freescale Semiconductor 5
f = 1990 MHz f = 1990 MHz Zload f = 1930 MHz f = 1930 MHz Zsource
Zo = 25
VDD = 26 V, IDQ = 300 mA, Pout = 30 W PEP f MHz 1930 1960 1990 Zsource 10.57 - j7.69 10.54 - j7.43 10.47 - j7.21 Zload 5.81 - j5.01 5.84 - j4.67 5.84 - j4.35
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance MRF19030LR3 MRF19030LSR3 6 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc
M M
Q
M
bbb B 3
TB
M
A
M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060.005 (1.520.13) RADIUS OR .06.005 (1.520.13) x 45 CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC
B
TA
M
B
M
TA
M
B E
M
ccc C
M
TA
M
B
M
R (LID) F
aaa
M
TA
M
B
M
M (INSULATOR) A
T
SEATING PLANE
S (INSULATOR) aaa
M
H B
M
DIM A B C D E F G H K M N Q R S aaa bbb ccc
TA
M
A
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465E - 04 ISSUE F NI - 400 MRF19030LR3
2X D bbb M T A
1
M
B
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF
2
2X K R C
3 (LID)
ccc E
M
TA
M
B
M
N
ccc
M
TA
M
B
M
(LID)
F
A
(FLANGE)
A
T M
SEATING PLANE
H
S
(INSULATOR)
aaa
(FLANGE)
M
TA
M
B
M
(INSULATOR)
B
B
aaa
M
TA
M
B
M
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465F - 04 ISSUE E NI - 400S MRF19030LSR3
MRF19030LR3 MRF19030LSR3 RF Device Data Freescale Semiconductor 7
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MRF19030LR3 MRF19030LSR3 8Rev. 12, 5/2006
Document Number: MRF19030
RF Device Data Freescale Semiconductor

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